Comprehensive study on vth variability in silicon on thin BOX (SOTB) CMOS with small random-dopant fluctuation: Finding a way to further reduce variation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Sugii, Nobuyuki ^a   Tsuchiya, Ryuta ^a   Ishigaki, Takashi ^a   Morita, Yusuke ^a   Yoshimoto, Hiroyuki ^a   Torii, Kazuyoshi ^a   Kimura, ShiN'Ichiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL DOPING; COMPREHENSIVE STUDIES; DOPANT FLUCTUATIONS; IMPURITIES IN; LOW DOSE; REDUCE VARIATIONS; REMAINING COMPONENTS; SHORT-CHANNEL EFFECTS; THICKNESS UNIFORMITIES;

ELECTRON DEVICES;

DOPING (ADDITIVES);

EID: 64549083627     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796664     Document Type: Conference Paper

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