Multiple gate devices: Advantages and challenges

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 378-385

  Poiroux, T ^a   Vinet, M ^a   Faynot, O ^a   Widiez, J ^a,b   Lolivier, J ^a   Ernst, T ^a   Previtali, B ^a   Deleonibus, S ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Double gate; FinFET; Gate all around; MOSFET scaling; Multiple gate transistors

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRIC CONDUCTANCE; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS; TOPOLOGY;

DOUBLE-GATE; FINFET; GATE-ALL-AROUND; MOSFET SCALING; MULTIPLE GATE TRANSISTORS;

GATES (TRANSISTOR);

EID: 19944379142     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.095     Document Type: Conference Paper

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