Smallest Vth variability achieved by intrinsic silicon on thin BOX (SOTB) CMOS with single metal gate

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2008, Pages 166-167

  Morita, Y ^a   Tsuchiya, R ^a   Ishigaki, T ^a   Sugii, N ^a   Iwamatsu, T ^b   Ipposhi, T ^b   Oda, H ^b   Inoue, Y ^b   Torii, K ^a   Kimura, S ^a  

^a HITACHI LTD   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NONMETALS; SILICON; TECHNOLOGY;

INTRINSIC CHANNELS; METAL GATES; VLSI TECHNOLOGIES;

METALS;

EID: 51949102860     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2008.4588604     Document Type: Conference Paper

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