High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Weber, O ^a   Faynot, O ^a   Andrieu, F ^a   Buj Dufournet, C ^a   Allain, F ^a   Scheiblin, P ^a   Foucher, J ^a   Daval, N ^b   Lafond, D ^a   Tosti, L ^a   Brevard, L ^a   Rozeau, O ^a   Fenouillet Beranger, C ^a   Marin, M ^c   Bceuf, F ^c   Delprat, D ^b   Bourdelle, K ^b   Nguyen, B Y ^b   Deleonibus, S ^a  

^a CEA LETI   (France)

^b PARC TECHNOLOGIQUE DES FONTAINES   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GATE LENGTHS; GATE STACKS; MATCHING PERFORMANCE; MOSFETS; SOI THICKNESS; THRESHOLD VOLTAGE VARIABILITIES; TIN GATES;

DIES; ELECTRON DEVICES; GATE DIELECTRICS; GATES (TRANSISTOR); THRESHOLD VOLTAGE; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

MOSFET DEVICES;

EID: 64549133760     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796663     Document Type: Conference Paper

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