Experimental investigation on superior PMOS performance of uniaxial strained 〈110〉 silicon nanowire channel by embedded SiGe source/drain

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 899-902

  Li, Ming ^a   Kyoung, Hwan Yeo ^a   Yun, Young Yeoh ^a   Sung, Dae Suk ^a   Keun, Hwi Cho ^a   Kim, Dong Won ^a   Park, Donggun ^a   Lee, Won Seong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY (SPECIFIC GRAVITY); ELECTRIC WIRE; ELECTRON DEVICES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SILICON ALLOYS;

EXPERIMENTAL INVESTIGATIONS; N-MOSFET; PERFORMANCE ENHANCEMENTS; PERFORMANCE IMPROVEMENTS; PMOSFET; SILICON CHANNELS; SILICON-NANOWIRE; STRAINED SILICON; STRESS INDUCED; UNIAXIAL STRESSES;

NONMETALS;

EID: 50249175910     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419095     Document Type: Conference Paper

References (4)

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3. S. E. Thompson, Guangyu Sun, Youn Sung Choi, Toshikazu Nishida, et al., "Uniaxial-process-induced strained-Si: extending the CMOS roadmap", TED, p. 1010, 2006
4. Jing Wang, Anisur Rahman, Gerhard Klimeck and Mark Lundstrom, "Bandstructure and Orientation Effects in Ballistic Si and Ge Nanowire FETs", IEDM Tech Dig.,2005