Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs

Microelectronic Engineering

Volumn 87, Issue 5-8, 2010, Pages 1561-1565

  Najmzadeh, M ^a   De Michielis, L ^a   Bouvet, D ^a   Dobrosz, P ^b   Olsen, S ^b   Ionescu, A M ^a  

^a EPFL   (Switzerland)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

Gate all around; Local lateral uniaxial tensile stress; Local mobility enhancement; Local oxidation; Si nanowires; Strain engineering

Indexed keywords

GATE-ALL-AROUND; LOCAL MOBILITY; LOCAL OXIDATION; SI NANOWIRE; STRAIN ENGINEERING;

BUCKLING; DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM ALLOYS; MOSFET DEVICES; NANOWIRES; OXIDATION; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; STRIPPING (DYES); TENSILE STRESS;

TENSILE STRAIN;

EID: 76949084924     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.11.024     Document Type: Article

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