Investigation of oxidation-induced strain in a top-down Si nanowire platform

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1961-1964

  Najmzadeh, M ^a   Bouvet, D ^a   Dobrosz, P ^b   Olsen, S ^b   Ionescu, A M ^a  

^a EPFL   (Switzerland)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

Oxidation induced strain (OIS); Si nanowires; Strain engineering

Indexed keywords

DIFFERENT PROCESS; INDUCED STRAIN; MICRO RAMAN SPECTROSCOPY; SI NANOWIRE; SI NANOWIRES; SILICON NANOWIRE FETS; SPACER TECHNOLOGY; STRAIN ENGINEERING; THERMAL OXIDATION; TOPDOWN;

CARRIER MOBILITY; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; NANOWIRES; OXIDATION;

SILICON;

EID: 67349206622     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.086     Document Type: Article

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