Performance studies on inversion channels of nMOSFETs under extreme mechanical load

Proceedings of IEEE Sensors

Volumn 3, Issue , 2004, Pages 1585-1588

  Kizilirmak, Gökhan ^a   Mokwa, Wilfried ^a   Schnakenberg, Uwe ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Mechanical stress; MOSFETs; Piezoresistivity; Silicon; Thin chips; Transistors

Indexed keywords

BENDING (DEFORMATION); COMMUNICATION CHANNELS (INFORMATION THEORY); ELECTRIC RESISTANCE; GATES (TRANSISTOR); MOSFET DEVICES; SILICON WAFERS; STRESS ANALYSIS;

MECHANICAL LOAD; MECHANICAL STRESS; THIN CHIPS;

MICROPROCESSOR CHIPS;

EID: 27944488382     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. R.E. Beaty, R.C. Jaeger, J.C. Suhling. R.W. Johnson, R.D. Butler, "Evaluation of piezoresistive coefficient variation in silicon stress sensors using a four-point bending test fixture," IEEE Trans. Comp., Hybrids, and Manufacturing Technol., vol. 15, October 1992
2. C. Canali, G. Ferla, B. Morten, A. Taroni, "Piezoresistivity effects in MOS-FET useful for pressure transducers," J. Phys. D: Appl. Phys., vol. 12, pp. 1973-1983, November 1979
3. R.C. Jaeger, J.C. Suhling, R. Ramani, A.T. Bradley, J. Xu, "CMOS stress sensors on (100) silicon," IEEE J. Solid-State Circuits, vol. 35, pp.85-95, January 2000
4. nd ed., Wiley-Interscience, New York, NY (1998)