Electron mobility enhancement in uniaxially strained MOSFETs: Extraction of the effective mass variation

ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

Volumn 2006-January, Issue , 2006, Pages 93-96

  Rochette, F ^a,b   Casse M ^a   Mouis, M ^b   Blachier, D ^a   Leroux, C ^a   Guillaumot, B ^c   Reimbold, G ^a   Boulanger, F ^a  

^a CEA LETI   (France)

^b Grenoble INP Phelma   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES;

APPLIED STRESS; CHANNEL ORIENTATIONS; EFFECTIVE MASS; ELECTRICAL MEASUREMENT; MOBILITY ENHANCEMENT; STRESS INCREASE; TRANSPORT DIRECTION; [110] DIRECTION;

ELECTRON MOBILITY;

EID: 44949225923     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/essder.2006.307646     Document Type: Conference Paper

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