High inversion current in silicon nanowire field effect transistors

Nano Letters

Volumn 4, Issue 11, 2004, Pages 2197-2201

  Koo, Sang Mo ^a   Fujiwara, Akira ^b   Han, Jin Ping ^a   Vogel, Eric M ^a   Richter, Curt A ^a   Bonevich, John E ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL WIDTHS; DRAIN CURRENT; ELECTRONIC STATES; SILICON NANOWIRES (SINW);

CARBON NANOTUBES; CRYSTALLINE MATERIALS; CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRON BEAM LITHOGRAPHY; ELECTRON MOBILITY; OHMIC CONTACTS; OXIDATION; POLYSILICON; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY;

FIELD EFFECT TRANSISTORS;

EID: 9644290791     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0486517     Document Type: Article

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