Impact of thermal annealing on deep-level defects in strained- SiSiGe heterostructure

Journal of Applied Physics

Volumn 103, Issue 10, 2008, Pages

  Zhang, Renhua ^a,d   Rozgonyi, George A ^a   Yakimov, Eugene ^b   Yarykin, Nikolai ^b   Seacrist, Mike ^c  

^a North Carolina State University   (United States)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^c MEMC Electronic Materials Inc   (United States)

^d Submicron Development Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP-LEVEL DEFECTS; HETERO STRUCTURES;

MICROFLUIDICS; SILICON;

ANNEALING;

EID: 44649174903     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2930998     Document Type: Article

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