Temperature dependence of electron beam induced current contrast of deformation-induced defects in silicon

Journal of Physics Condensed Matter

Volumn 16, Issue 2, 2004, Pages

  Feklisova, O V ^a   Yakimov, E B ^a   Yarykin, N ^a   Pichaud, B ^b  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^b AIX MARSEILLE UNIVERSITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; ELECTROSTATICS; EVAPORATION; IMAGE ANALYSIS; OPTICAL RESOLVING POWER; PLASTIC DEFORMATION; SCANNING;

ELECTRON BEAM INDUCED CURRENT (EBIC); THERMAL EVAPORATION;

SEMICONDUCTING SILICON;

EID: 1042266172     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/2/023     Document Type: Conference Paper

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