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Volumn 156, Issue 9, 2009, Pages

The annihilation of threading dislocations in the germanium epitaxially grown within the silicon nanoscale trenches

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION TECHNIQUE; EPITAXIALLY GROWN; GE FILMS; LATTICE-MISMATCHED; NANO SCALE; SELECTIVE GROWTH; SHALLOW TRENCH ISOLATION; SI SUBSTRATES; SILICON SUBSTRATES; THERMAL-ANNEALING; THREADING DISLOCATION;

EID: 68049139136     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3158832     Document Type: Article
Times cited : (9)

References (15)
  • 7
    • 0004291219 scopus 로고    scopus 로고
    • 4th ed., p, Butterworth-Heinemann, Woburn, MA..
    • D. Hull and D. J. Bacon, Introduction to Dislocations, 4th ed., pp. 82-98, Butterworth-Heinemann, Woburn, MA. (2001).
    • (2001) Introduction to Dislocations , pp. 82-98
    • Hull, D.1    Bacon, D.J.2
  • 8
    • 4143078533 scopus 로고
    • 0022-0248,. 10.1016/0022-0248(76)90041-5
    • J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 0022-0248, 32, 265 (1976). 10.1016/0022-0248(76)90041-5
    • (1976) J. Cryst. Growth , vol.32 , pp. 265
    • Matthews, J.W.1    Blakeslee, A.E.2
  • 13
    • 0002461450 scopus 로고
    • 10.1103/PhysRev.131.54
    • M. N. Kabler, Phys. Rev., 131, 54 (1963). 10.1103/PhysRev.131.54
    • (1963) Phys. Rev. , vol.131 , pp. 54
    • Kabler, M.N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.