Line, point and surface defect morphology of graded, relaxed GeSi alloys on Si substrates

Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 3-10

  Fitzgerald, E A ^a   Samavedam, S B ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Graded buffer layers; Islocation pile ups; Point defects; Relaxed GeSi Si

Indexed keywords

CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); POINT DEFECTS; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM COMPOUNDS; SURFACE STRUCTURE;

GRADED BUFFER LAYERS; SURFACE MORPHOLOGY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031073160     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09296-6     Document Type: Article

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