Influence of dislocations in strained Si/relaxed SiGe layers on n +/p -junctions in a metal-oxide-semiconductor field-effect transistor technology

Applied Physics Letters

Volumn 87, Issue 19, 2005, Pages 1-3

  Eneman, Geert ^a,b   Simoen, Eddy ^a   Delhougne, Romain ^a   Verheyen, Peter ^a   Loo, Roger ^a   De Meyer, Kristin ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DOPING (ADDITIVES); LEAKAGE CURRENTS; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

CARRIER GENERATION; JUNCTION LEAKAGE; STRAINED SILICON; THREADING DISLOCATION DENSITY;

DISLOCATIONS (CRYSTALS);

EID: 27644432247     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2128490     Document Type: Article

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