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Volumn 71, Issue , 2000, Pages 6-13

Defects in epitaxial SiGe-alloy layers

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; STRAIN; STRESS RELAXATION; THERMODYNAMIC STABILITY;

EID: 0033887858     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00341-4     Document Type: Article
Times cited : (5)

References (45)
  • 37
    • 84875528642 scopus 로고
    • Radiation Damage and Defects in Semiconductors
    • J.E. Whitehouse (Ed.), London and Bristol
    • A. Brelot, in: J.E. Whitehouse (Ed.), Radiation Damage and Defects in Semiconductors, Inst. Phys. Conf. Ser. 16, London and Bristol, 1973, p. 191.
    • (1973) Inst. Phys. Conf. Ser. , vol.16 , pp. 191
    • Brelot, A.1
  • 41
    • 85031595417 scopus 로고    scopus 로고
    • private communication
    • A. Mesli, private communication.
    • Mesli, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.