Selective epitaxial growth of Ge-on-Si for photodiode applications

ECS Transactions

Volumn 16, Issue 10, 2009, Pages 837-847

  Kim, M ^a   Olubuyide, O O ^a   Yoon, J U ^b   Hoyt, J L ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM COMPOUNDS; MORPHOLOGY; PHOTODIODES; SILICON COMPOUNDS; SILICON WAFERS; SURFACE ROUGHNESS;

DISLOCATION DENSITIES; GE FILMS; GROWTH CONDITIONS; GROWTH PARAMETERS; POSTGROWTH ANNEALING; PROCESSING CONDITION; SELECTIVE EPITAXIAL GROWTH; THREADING DISLOCATION DENSITIES;

SI-GE ALLOYS;

EID: 63149118511     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2986843     Document Type: Conference Paper

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