Influence of interface states on the temperature dependence and current-voltage characteristics of Ni/p-InP Schottky diodes

Superlattices and Microstructures

Volumn 47, Issue 2, 2010, Pages 241-252

  Ejderha, K ^a   Yildirim, N ^a   Turut A ^b   Abay, B ^b  

^a BINGOL UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Barrier height inhomogeneity; InP; Interfacial layer; Schottky barrier diodes; Thermionic emission

Indexed keywords

BARRIER HEIGHT INHOMOGENEITY; BARRIER HEIGHTS; FORWARD BIAS; HIGH TEMPERATURE; IDEALITY FACTORS; INP; INTERFACE STATE; INTERFACE STATE DENSITY; INTERFACIAL LAYER; N VALUE; NATIVE OXIDE LAYER; SCHOTTKY DIODES; SEMICONDUCTOR INTERFACES; SERIES RESISTANCES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; THERMIONIC EMISSION CURRENT;

CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTOR DIODES; THERMIONIC EMISSION;

SCHOTTKY BARRIER DIODES;

EID: 73549105461     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2009.11.008     Document Type: Article

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