Simulation studies of current transport in metal-insulator-semiconductor Schottky barrier diodes

Physica B: Condensed Matter

Volumn 390, Issue 1-2, 2007, Pages 179-184

  Chand, Subhash ^a   Bala, Saroj ^a  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Barrier height; Current voltage characteristics; Interfacial layer; Metal insulator semiconductor Schottky diodes; Numerical simulation; Schottky diodes

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC INSULATORS; ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTOR MATERIALS; THERMIONIC EMISSION;

BARRIER HEIGHT; INTERFACIAL INSULATING LAYERS; METAL INSULATOR SEMICONDUCTOR SCHOTTKY DIODES; THERMIONIC EMISSION DIFFUSION (TED);

SCHOTTKY BARRIER DIODES;

EID: 33846075358     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2006.08.011     Document Type: Article

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