On the intersecting behaviour of experimental forward bias current-voltage (I-V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes at low temperatures

Semiconductor Science and Technology

Volumn 21, Issue 8, 2006, Pages 1053-1058

  Dökme, Ibilge ^a   Altindal, Şemsettin ^b  

^a AHI EVRAN UNIVERSITY   (Turkey)

^b GAZI UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHARGE TRANSFER; CURRENT VOLTAGE CHARACTERISTICS; LOW TEMPERATURE EFFECTS; MEASUREMENT THEORY;

ENERGY DISTRIBUTION; SCHOTTKY BARRIER HEIGHT (SBH); THERMIONIC EMISSION (TE);

SCHOTTKY BARRIER DIODES;

EID: 33749077525     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/8/012     Document Type: Article

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