A self-consistent technique for the analysis of the temperature dependence of current-voltage and capacitance-voltage characteristics of a tunnel metal-insulator-semiconductor structure

Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 5217-5226

  Cova, P ^a   Singh, A ^a   Masut, R A ^b  

^a UNIVERSIDAD DE ORIENTE   (Venezuela)

^b ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ADMITTANCE METHOD; BARRIER HEIGHTS; BARRIER LOWERING; CAPACITANCE VOLTAGE; CAPACITANCE VOLTAGE CHARACTERISTIC; CARRIER DENSITY; CHARACTERISTIC PARAMETER; COMPUTATIONAL ANALYSIS; CURRENT TRANSPORT; CURRENT TRANSPORT MECHANISM; DIFFUSION MECHANISMS; DOMINANT MECHANISM; EPITAXIAL MATERIALS; EXPERIMENTAL VERIFICATION; FORWARD CURRENTS; IMAGE FORCE; INP; INSULATOR LAYER; INTERFACE STATE; INTERFACE STATE DENSITY; INTERFACIAL LAYER; IV CHARACTERISTICS; METAL INSULATOR SEMICONDUCTOR STRUCTURES; METAL-INSULATOR-SEMICONDUCTOR DEVICES; MIS DIODES; MULTI FREQUENCY; OXIDE THICKNESS; SELF-CONSISTENT METHOD; TEMPERATURE DEPENDENCE OF CURRENT; TEMPERATURE RANGE; THEORETICAL EXPRESSION; THERMAL EQUILIBRIUMS; TRANSMISSION COEFFICIENTS; ZERO BIAS; ZERO TEMPERATURES;

BIAS VOLTAGE; CAPACITANCE; COMPUTATION THEORY; COMPUTATIONAL METHODS; METAL ANALYSIS; METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON SOLAR CELLS; THERMIONIC EMISSION; ZINC;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 0008403244     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366386     Document Type: Article

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