Experimental characterization of single-walled carbon nanotube film-Si Schottky contacts using metal-semiconductor-metal structures

Applied Physics Letters

Volumn 92, Issue 24, 2008, Pages

  Behnam, Ashkan ^a   Johnson, Jason L ^a   Choi, Yongho ^a   Ertosun, M Günhan ^b   Okyay, Ali K ^b   Kapur, Pawan ^b   Saraswat, Krishna C ^b   Ural, Ant ^a  

^a University of Florida   (United States)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CARBON FILMS; DIRECT ENERGY CONVERSION; ELECTRIC CONDUCTIVITY; ELECTRONIC PROPERTIES; MARKOV PROCESSES; METALLIZING; NANOCOMPOSITES; NANOPORES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; PHOTODETECTORS; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS; SILICON; SINGLE-WALLED CARBON NANOTUBES (SWCN); STRUCTURAL METALS; THERMIONIC EMISSION;

(100) SILICON; (PL) PROPERTIES; AMERICAN INSTITUTE OF PHYSICS (AIP); CNT FILMS; CONTROL DEVICES; DARK CURRENT RATIO; DOMINANT TRANSPORT; EXPERIMENTAL CHARACTERIZATION; METAL SEMICONDUCTOR METAL (MSM); METAL SEMICONDUCTOR METAL (MSM) DEVICES; METAL-SEMICONDUCTOR-METAL (MSM) STRUCTURE; SCHOTTKY CONTACTS; SCHOTTKY ELECTRODES; SI BASED DEVICES; SINGLE WALLED CARBON NANOTUBE (SWCNTA);

CARBON NANOTUBES;

EID: 45749133470     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2945644     Document Type: Article

References (18)

1. Z. Wu, Z. Chen, X. Du, J. Logan, J. Sippel, M. Nikolou, K. Kamaras, J. Reynolds, D. Tanner, A. Hebard, and A. Rinzler, Science SCIEAS 0036-8075 10.1126/science.1101243 305, 1273 (2004).
2. G. Grüner, J. Mater. Chem. JMACEP 0959-9428 16, 2533 (2006).
3. A. Behnam, L. Noriega, Y. Choi, Z. Wu, A. G. Rinzler, and A. Ural, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2339029 89, 093107 (2006).
4. A. Behnam, Y. Choi, L. Noriega, Z. Wu, I. Kravchenko, A. G. Rinzler, and A. Ural, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.2699836 25, 348 (2007).
5. S. Lu and B. Panchapakesan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2214148 88, 253107 (2006).
6. K. Lee, Z. Wu, Z. Chen, F. Ren, S. J. Pearton, and A. G. Rinzler, Nano Lett. NALEFD 1530-6984 10.1021/nl0496522 4, 911 (2004).
7. M. C. Aguirre, S. Auvray, S. Pigeon, R. Izquierdo, R. Desjardins, and R. Martel, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2199461 88, 183194 (2006).
8. A. D. Pasquier, H. E. Unalan, A. Kanwal, S. Miller, and M. Chhowalla, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2132065 87, 203511 (2005).
9. M. W. Rowell, M. A. Topinka, M. D. McGehee, H. J. Prall, G. Dennler, N. S. Sariciftci, L. Hu, and G. Grüner, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2209887 88, 233506 (2006).
10. A. Behnam, J. L. Johnson, Y. Choi, L. Noriega, M. G. Ertosun, Z. Wu, A. G. Rinzler, P. Kapur, K. C. Saraswat, and A. Ural, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2938037 103, 114315 (2008).
11. S. M. Sze, D. J. Coleman, and A. Loya, Solid-State Electron. SSELA5 0038-1101 10.1016/0038-1101(71)90109-2 14, 1209 (1971).
12. B. Majkusiak, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.711354 45, 1903 (1998).
13. J. Burm and L. F. Eastman, IEEE Photonics Technol. Lett. IPTLEL 1041-1135 10.1109/68.475796 8, 113 (1996).
14. V. Barone, J. E. Peralta, J. Uddin, and E. S. Gustavo, J. Chem. Phys. JCPSA6 0021-9606 10.1063/1.2150213 124, 024709 (2006).
15. B. Shan and K. Cho, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.94.236602 94, 236602 (2005).
16. E. J. Miller, E. T. Yu, P. Waltereit, and J. S. Speck, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1644029 84, 535 (2004).
17. M. O. Aboelfotoh, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.341338 64, 4046 (1988).
18. C. O. Chui, A. K. Okyay, and K. C. Saraswat, IEEE Photonics Technol. Lett. IPTLEL 1041-1135 10.1109/LPT.2003.818683 15, 1585 (2003).