Analysis of interface states of metal-insulator-semiconductor photodiode with n-type silicon by conductance technique

Sensors and Actuators, A: Physical

Volumn 147, Issue 1, 2008, Pages 104-109

  Yakuphanoglu, Fahrettin ^a  

^a FIRAT UNIVERSITY   (Turkey)

Author keywords

Interfacial state density; Metal insulator semiconductor; Photodiode

Indexed keywords

ADMINISTRATIVE DATA PROCESSING; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRIC CONDUCTIVITY; ELECTRIC MACHINE INSULATION; HEALTH; METAL INSULATOR BOUNDARIES; METALLIZING; METALS; MIS DEVICES; NONMETALS; OPTICAL DESIGN; PHOTODIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR MATERIALS; SILICON; SWITCHING CIRCUITS;

ACTIVE LAYERS; BARRIER HEIGHT (BH); CURRENT VOLTAGE (I V) CHARACTERISTICS; DENSITY OF INTERFACE STATES; ELECTRONIC PARAMETERS; IDEALITY FACTORS; INTERFACE STATES; METAL-INSULATOR-SEMICONDUCTOR (MIS); N-TYPE SILICON; PHOTOVOLTAIC PROPERTIES; SCHOTTKY ELECTRODES; SERIES RESISTANCE (ESR);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 47649093533     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2008.04.007     Document Type: Article

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