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Applied Surface Science

Volumn 252, Issue 8, 2006, Pages 2999-3010

Current transport mechanism in Al/Si 3 N 4 /p-Si (MIS) Schottky barrier diodes at low temperatures

(4) Zeyrek, S a Altindal, S b Yuzer H c Bulbul M M b

a DUMLUPINAR UNIVERSITY (Turkey)

b GAZI UNIVERSITY (Turkey)

c MATERIALS INSTITUTE (Turkey)

Author keywords

Insulator layer; Interface states; MIS diode; Nitride passivation; Temperature dependence

Indexed keywords

DIODES; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; HEAT RADIATION; THERMAL EFFECTS; TRANSPORT PROPERTIES;

INSULATOR LAYERS; INTERFACE STATES; MIS DIODES; TEMPERATURE DEPENDENCE;

MIM DEVICES;

EID: 31344453830 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2005.05.008 Document Type: Article

Times cited : (124)

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