Generalized approach to the parameter extraction from I-V characteristics of Schottky diodes

Semiconductor Science and Technology

Volumn 11, Issue 8, 1996, Pages 1198-1202

  Osvald, J ^a   Dobrocka E ^b  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b Physics and Informatics   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

IDEALITY FACTORS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIER INHOMOGENEITIES; SCHOTTKY BARRIER PARAMETER EVALUATION;

SCHOTTKY BARRIER DIODES;

EID: 0030205420     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/8/014     Document Type: Article

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