Electrical behaviour of Al/SiGe/Si heterostructures: Effect of surface treatment and dislocations

Applied Surface Science

Volumn 234, Issue 1-4, 2004, Pages 54-59

  Horvath Zs J ^a   Adam M ^a   Szabo I ^a   Orlov, L K ^b   Potapov, A V ^b   Tolomasov, V A ^b  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

Dislocations; Electrical behaviour; Heterostructures; Schottky; SiGe; Surface treatment

Indexed keywords

CAPACITANCE; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; GERMANIUM; MOLECULAR BEAM EPITAXY; SENSITIVITY ANALYSIS; SUBLIMATION; SURFACE TREATMENT;

ELECTRICAL BEHAVIOUR; ELECTRICAL FIELDS; INSTABILITIES; SCHOTTKY;

SILICON;

EID: 3342945222     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.064     Document Type: Conference Paper

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