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Physica B: Condensed Matter

Volumn 352, Issue 1-4, 2004, Pages 312-317

The importance of the neutral region resistance for the calculation of the interface state in Pb/p-Si Schottky contacts

(3) Aydin M E a Akkilic K a Kilicoglu, T a

a DICLE UNIVERSITY (Turkey)

Author keywords

Ohmic contact; Schottky barrier; Series resistance; Silicon

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; INTERFACES (MATERIALS); OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SILICON;

METAL-SEMICONDUCTOR DEVICES; SCHOTTKY CONTACTS; SERIES RESISTANCE; THERMAL ANNEALING;

LEAD;

EID: 5444230846 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2004.08.003 Document Type: Article

Times cited : (38)

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