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Microelectronic Engineering

Volumn 83, Issue 3, 2006, Pages 577-581

On the profile of temperature dependent series resistance in Al/Si 3N4/p-Si (MIS) Schottky diodes

(4) Bulbul M M a Zeyrek, S b Altindal, S a Yuzer H c

a GAZI UNIVERSITY (Turkey)

b DUMLUPINAR UNIVERSITY (Turkey)

c MATERIALS INSTITUTE (Turkey)

Author keywords

Conductance method; MIS structure; Nitride passivation; Series resistance; Temperature dependence

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; NITRIDES; THERMAL EFFECTS;

CONDUCTANCE METHOD; MIS STRUCTURE; NITRIDE PASSIVATION; SERIES RESISTANCE; TEMPERATURE DEPENDENCE;

DIODES;

EID: 33244478099 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2005.12.013 Document Type: Article

Times cited : (70)

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