Analysis of interface states and series resistance of Ag/SiO2/n-Si MIS Schottky diode using current-voltage and impedance spectroscopy methods

Microelectronic Engineering

Volumn 85, Issue 3, 2008, Pages 646-653

  Okutan, Mustafa ^a   Yakuphanoglu, Fahrettin ^b  

^a GEBZE TECHNICAL UNIVERSITY   (Turkey)

^b FIRAT UNIVERSITY   (Turkey)

Author keywords

AC conductance; Interfacial state density; Metal insulator semiconductor diode

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY; PARAMETER ESTIMATION; SEMICONDUCTOR DIODES; SILICA; SILVER;

AC CONDUCTANCE; INTERFACIAL STATE DENSITY; METAL-INSULATOR-SEMICONDUCTOR DIODES;

SCHOTTKY BARRIER DIODES;

EID: 39149109158     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.11.011     Document Type: Article

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