Characteristics of Al/p-AgGaTe2 polycrystalline thin film Schottky barrier diode

Crystal Research and Technology

Volumn 43, Issue 5, 2008, Pages 542-546

  Patel, S S ^a   Patel, B H ^a   Patel, T S ^b  

^a SARDAR PATEL UNIVERSITY   (India)

^b Mechanical Engineering Department   (India)

Author keywords

AgGaTe2 thin film; Capacitance Voltage; Current voltage; Photoresponse; Schottky barrier diode

Indexed keywords

CAPACITANCE; DIODES; THICK FILMS; THIN FILM DEVICES; THIN FILMS;

AGGATE2 THIN FILM; CAPACITANCE- VOLTAGE; CURRENT-VOLTAGE; PHOTORESPONSE; SCHOTTKY BARRIER DIODE;

SCHOTTKY BARRIER DIODES;

EID: 54949128206     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.200711041     Document Type: Article

References (37)

1. A. H. Agajanian and V. L. Rideout, "A bibliography on metal-semiconductor (Schottky barrier) contacts", IBM TechRep. TR22-1745, March 1974.
2. E. H. Rhoderick and R. H. Williams, "Metal-Semiconductor Contacts", Clarendon, Oxford, 1988.
3. L. J. Brillson, "Handbook on Semiconductors", edited by P. T. Landsberg, North Holland, Amsterdam, 1992.
4. G. Margaritondo, Rep. Prog. Phys. 62, 765 (1999).
5. P. S. Dutta, H. L. Bhat, K. S. Sangunni, and V. Kumar, "Physics of Semiconductor Devices", edited by Krishan Lal, Narosa Publishing House, New Delhi, 1993.
6. Hisashi Arakaki, Kazuto shiohashi, and Tomoko Sudou, Semicond. Sci. Technol. 19, 127 (2004).
7. Cevdet Coskun, Sakir Aydogan, and Hasan Efeoglu, Semicond. Sci. Technol. 19, 242 (2004).
8. C. Nuhoglu, S. Aydogan, and A. Turut, Semicond. Sci. Technol. 18, 642 (2003).
9. B. Abay, G. Cankaya, H. S. Guder, H. Efeoglu, and Y. K. Yogurtcu, Semicond. Sci. Technol. 18, 75 (2003).
10. D. L. Polla and A. K. Sood, J. Appl. Phys. 9, 51 (1988).
11. E. Hokeick and G. Y. Robinsor, J. Appl. Phys. 9, 54 (1983).
12. L. D. Pressman, S. R. Forrest, W. A. Banner, and L. G. Vanvitert, Appl. Phys. Lett. 10, 41 (1982).
13. A. Ortiz, S. Lopez, J. C. Alonso, and S. Mahl, Thin Solid Films 207, 279 (1992).
14. N. A. Hastas, D. H. Tassis, C. A. Dimitriadis, L. Dozsa, S. Franchi, and P. Frigeri, Semicond. Sci. Technol. 19, 461 (2004).
15. Huey-Ing Chen, Chien-Kang Hsiung, and Yen-I Chou, Semicond. Sci. Technol. 18, 620 (2003).
16. C. Berthod, N. Binggeli, and A. Baldereschi, Phys. Rev. B 68, 085323 (2003).
17. T. G. G. Maffeis, M. C. Simmonds, S. A. Clark, F. Peiro, P. Haines, and P. J. Parbrook, J. Phys. D 33, L115 (2000).
18. C. Nguyen Van and K. Potje-Kamloth, J. Phys. D 33, 2230 (2000).
19. G. Venkato Rao, G. Hema Chandra, O. M. Hussain, S. Uthanna, and B. Srinivasulu Naidu, Cryst. Res. Technol. 36, 571 (2001).
20. S. M. Patel and V. G. Kapale, Phys. Stat. Sol. 101, K 87 (1987).
21. M. B. Das, S. V. Krishnaswamy, R. Petkie, P. Swab, and K. M. Vada, Solid State Electron. 4, 27 (1984).
22. C. B. Duke, "Tunneling in Solids", Academic Press, New York, 1969, pp. 102-110.
23. C. A. Mead, in B.Chwartz (ed.), "Ohmic contacts to Semiconductors", The Electrochemical Society, New York, 1969, pp. 3-16.
24. M. M. E. Beguwala and C. R. Crowell, Solid State Electron. 17, 207 (1974).
25. B. Tell, J. L. Shay, and H. M. Kasper, Phys. Rev. B 9, 5203 (1974).
26. N. N. Konstantinkova and Y. V. Rud, Sov. Phys. Semicond. 23, 1101 (1989).
27. C. Julien, I. Ivanov, A. Khelfa, F. Alapini, and M. Guittard, J. Mater. Sci. 31, 3315 (1996).
28. A. G. Jackson, M. C. Ohmer, and S. R. Leclair, Infrared Phys. Technol. 38, 233 ( 1997).
29. B. H. Patel and S. S. Patel, Cryst. Res. Technol. 41, 117 (2006).
30. R. C. Weast, "Handbook of Chemistry and Physics", 1987, p. E-81.
31. V. P. Zhuze, V. M. Sergeeva, and E. L. Shtrum, Sov. Phys. Tech. Phys. 3, 1925 (1958).
32. W. N. Honeyman and K. H. Wilkinson, J. Phys. D 4, 1182 (1971).
33. M. A. Abdullaev, I. K. Kamilov, D. K. Magomedova, and P. P. Khokhlachev, Inorg. Mat. 39, 103 (2003).
34. S. M. Sze, "Physics of Semiconductor Devices", Second Edition, John Wiely Sons Inc., 1981.
35. F. A. Padovani and G. G. Sumner, J. Appl. Phys. 36, 3744 (1965).
36. H. Tsuque and Y. Onuma, Jpn. J. Appl. Phys. 16, 1973 (1997).
37. R. H. Fowler, Phys. Rev. 38, 45 (1931).