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Volumn 49, Issue 6, 2005, Pages 878-883

The barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky barrier diodes

Author keywords

Conducting probe AFM; GaAs; Schottky barrier height inhomogeneities

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAM LITHOGRAPHY; EVAPORATION; GOLD; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON WAFERS;

EID: 18844407042     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.03.005     Document Type: Article
Times cited : (73)

References (22)
  • 2
    • 3342986527 scopus 로고
    • R.T. Tung Phys Rev B 45 23 1992 13509
    • (1992) Phys Rev B , vol.45 , Issue.23 , pp. 13509
    • Tung, R.T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.