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Volumn 49, Issue 6, 2005, Pages 878-883
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The barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky barrier diodes
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Author keywords
Conducting probe AFM; GaAs; Schottky barrier height inhomogeneities
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRON BEAM LITHOGRAPHY;
EVAPORATION;
GOLD;
MATHEMATICAL MODELS;
SEMICONDUCTING GALLIUM ARSENIDE;
SILICON WAFERS;
BARRIER HEIGHT (BH);
CONDUCTING PROBE-ATOMIC FORCE MICROSCOPY (CP-AFM);
GAAS;
SCHOTTKY BARRIER HEIGHT INHOMOGENEITIES;
SCHOTTKY BARRIER DIODES;
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EID: 18844407042
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/j.sse.2005.03.005 Document Type: Article |
Times cited : (73)
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References (22)
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