Analysis of frequency- and temperature-dependent interface states in PtSi/p-Si Schottky diodes

Materials Science and Engineering: B

Volumn 154-155, Issue 1-3, 2008, Pages 179-182

  Sellai, A ^a   Ouennoughi, Z ^b  

^a SULTAN QABOOS UNIVERSITY   (Oman)

^b FERHAT ABBAS UNIVERSITY   (Algeria)

Author keywords

Conductance method; Interface states; Schottky contacts

Indexed keywords

CAPACITANCE; CAPACITANCE MEASUREMENT; RELAXATION TIME; SCHOTTKY BARRIER DIODES;

CONDUCTANCE METHOD; CONDUCTANCE-FREQUENCY; FREQUENCY-DEPENDENT; INTERFACES STATE; LOWER FREQUENCIES; QUANTITATIVE INFORMATION; SCHOTTKY CONTACTS; SCHOTTKY STRUCTURES; SI SCHOTTKY DIODE; TEMPERATURE DEPENDENT;

INTERFACE STATES;

EID: 56949107466     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.09.048     Document Type: Article

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