Metal contacts in nanocrystalline n-type GaN: Schottky diodes

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 4, 2009, Pages 2532-2539

  Das, S N ^a   Sarangi, S ^b   Sahu, S N ^b   Pal, A K ^a  

^a JADAVPUR UNIVERSITY   (India)

^b INSTITUTE OF PHYSICS   (India)

Author keywords

III V semiconductors; Nanostructures; Schottky diode

Indexed keywords

CAPACITANCE-VOLTAGE CHARACTERISTICS; CONTACT PROPERTIES; CURRENT VOLTAGE; FUSED SILICA SUBSTRATES; GAN FILM; HIGH PRESSURE SPUTTERING; III-V SEMICONDUCTORS; METAL CONTACTS; NANOCRYSTALLINE; NANOCRYSTALLINE FILMS; SCHOTTKY DIODE; SCHOTTKY DIODES; TOP CONTACT;

CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; DIODES; ELECTRIC POTENTIAL; FUSED SILICA; GALLIUM NITRIDE; GOLD; NANOCRYSTALLINE MATERIALS; NANOSTRUCTURES; PALLADIUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; SILICA;

GALLIUM ALLOYS;

EID: 67650826056     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.211     Document Type: Article

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