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Volumn 2007, Issue , 2007, Pages 131-134

A reliable and accurate approach to assess NBTI behavior of state-of-the-art pMOSFETs with fast-WLR

Author keywords

[No Author keywords available]

Indexed keywords

PROBLEM SOLVING; PROCESS MONITORING; STRESS MEASUREMENT; THERMODYNAMIC STABILITY;

EID: 39549109784     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2007.4430896     Document Type: Conference Paper
Times cited : (11)

References (12)
  • 1
    • 84914709684 scopus 로고    scopus 로고
    • C. Schlünder, Mixed Signal Circuit Reliability - From Device Stress Conditions to IC-Failure, Tutorial Notes International Reliability Physics Symp. (IRPS), April 17th , San Jose, 2005, pp. 1-18 and March 26th, San Jose, 2006, Tp. 121, pp. 1-20
    • C. Schlünder, "Mixed Signal Circuit Reliability - From Device Stress Conditions to IC-Failure", Tutorial Notes International Reliability Physics Symp. (IRPS), April 17th , San Jose, 2005, pp. 1-18 and March 26th, San Jose, 2006, Tp. 121, pp. 1-20
  • 4
    • 30844464359 scopus 로고    scopus 로고
    • The Negative Bias Temperature Instability in MOS Devices: A Review, Microelectronics Reliability
    • J.H. Stathis a. S. Zafar, "The Negative Bias Temperature Instability in MOS Devices: A Review", Microelectronics Reliability, Microelectronics Reliability, Vol.46, no.2-4, 2006, p.270
    • (2006) Microelectronics Reliability , vol.46 , Issue.2-4 , pp. 270
    • Stathis, J.H.1    Zafar, A.S.2
  • 5
    • 84914709683 scopus 로고    scopus 로고
    • A.T. Krishnan V. Reddy, S. Chakravarthi, J. Rodriguez, S. John, S. Krishnan, NBTI Impact on Transistor and circuit: models, mechanisms and scaling effects [MOSFETs], IEEE International Electron Devices Meeting (IEDM) Technical Digest, 8-10 Dec. 2003, pp.14.5.1-14.5.4
    • A.T. Krishnan V. Reddy, S. Chakravarthi, J. Rodriguez, S. John, S. Krishnan, "NBTI Impact on Transistor and circuit: models, mechanisms and scaling effects [MOSFETs]", IEEE International Electron Devices Meeting (IEDM) Technical Digest, 8-10 Dec. 2003, pp.14.5.1-14.5.4
  • 10
    • 3142699326 scopus 로고    scopus 로고
    • An Introduction to Fast Wafer Level Reliability Monitoring for Integrated Circuit Mass Production
    • A. Martin, R.-P. Vollertsen, "An Introduction to Fast Wafer Level Reliability Monitoring for Integrated Circuit Mass Production", Microelectronics Reliability, vol. 44, pp. 1209-1231, 2004
    • (2004) Microelectronics Reliability , vol.44 , pp. 1209-1231
    • Martin, A.1    Vollertsen, R.-P.2
  • 11
    • 46049113552 scopus 로고    scopus 로고
    • C. Shen, M.-F. Li, C.E. Foo, T., Yang, D.M. Huang, A. Yap, G.S. Samudra, Y.-C. Yeo., Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric, IEEE International Electron Devices Meeting (IEDM) Technical Digest, 2006, p.333
    • C. Shen, M.-F. Li, C.E. Foo, T., Yang, D.M. Huang, A. Yap, G.S. Samudra, Y.-C. Yeo., "Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric", IEEE International Electron Devices Meeting (IEDM) Technical Digest, 2006, p.333
  • 12
    • 3142699325 scopus 로고    scopus 로고
    • Bias Temperature Instability Assessment of n- and p- Channel MOS Transistors using a Polysilicon Resistive Heated Scribe Lane Test Structure
    • Werner Muth, Wolfgang Walter, "Bias Temperature Instability Assessment of n- and p- Channel MOS Transistors using a Polysilicon Resistive Heated Scribe Lane Test Structure", Microelectronics Reliability, vol. 44, pp. 1251-1262, 2004
    • (2004) Microelectronics Reliability , vol.44 , pp. 1251-1262
    • Muth, W.1    Walter, W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.