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Volumn , Issue , 2008, Pages 79-86

A novel multi-point NBTI characterization methodology using smart intermediate stress (SIS)

Author keywords

[No Author keywords available]

Indexed keywords

INTERMEDIATE STRESS; MEASUREMENT METHODS; NBTI CHARACTERIZATION; RELIABILITY PHYSICS;

EID: 51549097592     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558867     Document Type: Conference Paper
Times cited : (24)

References (20)
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    • JEDEC 14.2.2, Draft for NBTI measurements, in work 2008
  • 2
    • 30844464359 scopus 로고    scopus 로고
    • The Negative Bias Temperature Instability in MOS devices: A Review
    • JH. Stathis a. S. Zafar, "The Negative Bias Temperature Instability in MOS devices: A Review" Microelectronics and Reliability 46, 2005, pp. 270-286
    • (2005) Microelectronics and Reliability , vol.46 , pp. 270-286
    • Stathis, J.H.1    Zafar, A.S.2
  • 3
    • 21644482021 scopus 로고    scopus 로고
    • NBTI: What we know and what we need to know - a tutorial addressing the current understanding and challenges for the future
    • 18-21 Oct
    • J.G. Massey, "NBTI: what we know and what we need to know - a tutorial addressing the current understanding and challenges for the future", IEEE International Integrated Reliability Workshop (IRW) Final Report, 18-21 Oct. 2004, pp. 199-211
    • (2004) IEEE International Integrated Reliability Workshop (IRW) Final Report , pp. 199-211
    • Massey, J.G.1
  • 4
    • 51549091265 scopus 로고    scopus 로고
    • A.T. Krishnan V. Reddy, S. Chakravarthi, J. Rodriguez, S. John, S. Krishnan, NBTI Impact on Transistor and circuit: models, mechanisms and scaling effects [MOSFETs], IEEE International Electron Devices Meeting (IEDM) Technical Digest, 8-10 Dec. 2003, pp.14.5.1 -14.5.4
    • A.T. Krishnan V. Reddy, S. Chakravarthi, J. Rodriguez, S. John, S. Krishnan, "NBTI Impact on Transistor and circuit: models, mechanisms and scaling effects [MOSFETs]", IEEE International Electron Devices Meeting (IEDM) Technical Digest, 8-10 Dec. 2003, pp.14.5.1 -14.5.4
  • 7
    • 0842309776 scopus 로고    scopus 로고
    • Universal recovery behavior of negative bias temperature instability [PMOSFETs], Technical Digest IEEE
    • 8-10 Dec
    • S.Rangan, N. Mielke, and E. C. C. Yeh, "Universal recovery behavior of negative bias temperature instability [PMOSFETs]", Technical Digest IEEE International Electron Devices Meeting (IEDM), 8-10 Dec. 2003, pp. 341 - 344
    • (2003) International Electron Devices Meeting (IEDM) , pp. 341-344
    • Rangan, S.1    Mielke, N.2    Yeh, E.C.C.3
  • 10
    • 34547148329 scopus 로고    scopus 로고
    • H. Reisinger, O. Blank, W. Heinrigs, W. Gustin, C. Schlünder, A Comparison of Very Fast to Very Slow Components in Degradation and Recovery Due to NBTI and Bulk Hole Trapping to Existing Physical Models, IEEE Transactions on Device and Materials Reliability (TDMR), 2007, 7, Issue: 1, pp. 119-129
    • H. Reisinger, O. Blank, W. Heinrigs, W. Gustin, C. Schlünder, "A Comparison of Very Fast to Very Slow Components in Degradation and Recovery Due to NBTI and Bulk Hole Trapping to Existing Physical Models", IEEE Transactions on Device and Materials Reliability (TDMR), 2007, Volume 7, Issue: 1, pp. 119-129
  • 11
    • 21644455928 scopus 로고    scopus 로고
    • On-the-fly characterization of NBTI in ultra-thin gate-oxide pMOSFET's, IEEE International Electron Devices Meeting (IEDM)
    • M. Denais, A. Bravaix, V. Huard, C. Parthasarathy G. Ribes, F. Perrier, Y. Rey-Tauriac, and N. Revil, "On-the-fly characterization of NBTI in ultra-thin gate-oxide pMOSFET's", IEEE International Electron Devices Meeting (IEDM), Technical Digest, 2004. pp.109-112
    • (2004) Technical Digest , pp. 109-112
    • Denais, M.1    Bravaix, A.2    Huard, V.3    Parthasarathy, C.4    Ribes, G.5    Perrier, F.6    Rey-Tauriac, Y.7    Revil, N.8
  • 13
    • 46049113552 scopus 로고    scopus 로고
    • C. Shen, M.-F. Li, C.E. Foo, T, Yang, D.M. Huang, A. Yap, G.S. Samudra, Y.-C. Yeo., Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric, IEEE International Electron Devices Meeting (IEDM) Technical Digest, 2006, p.333
    • C. Shen, M.-F. Li, C.E. Foo, T, Yang, D.M. Huang, A. Yap, G.S. Samudra, Y.-C. Yeo., "Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric", IEEE International Electron Devices Meeting (IEDM) Technical Digest, 2006, p.333
  • 18
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    • A.E. Islam, E. N. Kumarl, H. Dasl, S. Purawat, V. Mahetal, H. Aono, E. Murakami, S. Mahapatral, and M.A. Alam, Theory and Practice of On-the-fly and Ultra-fast VT Measurements for NBTI Degradation: Challenges and Opportunities, IEEE International Electron Devices Meeting (IEDM), 2007, pp.805-808
    • A.E. Islam, E. N. Kumarl, H. Dasl, S. Purawat, V. Mahetal, H. Aono, E. Murakami, S. Mahapatral, and M.A. Alam, "Theory and Practice of On-the-fly and Ultra-fast VT Measurements for NBTI Degradation: Challenges and Opportunities", IEEE International Electron Devices Meeting (IEDM), 2007, pp.805-808


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.