Hole traps in silicon dioxides - Part I: Properties

IEEE Transactions on Electron Devices

Volumn 51, Issue 8, 2004, Pages 1267-1273

  Zhang, Jian F ^a   Zhao, Ce Z ^a   Chen, Ai H ^a   Groeseneken, Guido ^b   Degraeve, R ^b  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DEGRADATION; HOLE TRAPS; INTERFACES (MATERIALS); SILICA; SILICON ON INSULATOR TECHNOLOGY; TEMPERATURE MEASUREMENT;

ANOMALOUS POSITIVE CHARGES; ANTINEUTRALIZATION POSITIVE CHARGE; BORDER TRAPS; CYCLIC POSITIVE CHARGE; DEFECT GENERATION; SLOW STATES;

CMOS INTEGRATED CIRCUITS;

EID: 3943092599     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.831379     Document Type: Article

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