Atomic scale defects involved in MOS reliability problems

Microelectronic Engineering

Volumn 69, Issue 2-4, 2003, Pages 173-181

  Lenahan, P M ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Device reliability; Electron spin resonance; Trapping centers

Indexed keywords

CHEMICAL BONDS; CORRELATION METHODS; ELECTRONIC PROPERTIES; INTERFACES (MATERIALS); PARAMAGNETIC RESONANCE; SILICA; SILICON;

ATOMIC SCALE DEFECTS;

MOS DEVICES;

EID: 0141457906     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00294-6     Document Type: Conference Paper

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