The effect of the subthreshold slope degradation on NBTI device characterization

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2008, Pages 96-99

  Brisbin, D ^a   Chaparala, P ^a  

^a NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES; THRESHOLD VOLTAGE;

DEVICE CHARACTERIZATION; FAST SWITCHING; MEASUREMENT CONDITIONS; MEASUREMENT METHODS; MEASUREMENT TECHNIQUES; PMOSFET'S; RECOVERY EFFECTS; STRESS TIME; SUBTHRESHOLD SLOPE; THRESHOLD VOLTAGE DEGRADATION;

NEGATIVE BIAS TEMPERATURE INSTABILITY;

EID: 64549108448     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2008.4796095     Document Type: Conference Paper

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