Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistors

IEEE Electron Device Letters

Volumn 29, Issue 5, 2008, Pages 460-463

  Wong, Hoong Shing ^a   Ang, Kah Wee ^a   Chan, Lap ^a   Hoe, Keat Mun ^b   Tung, Chih Hang ^b   Balasubramanian, N ^b   Weeks, Doran ^c   Bauer, Matthias ^c   Spear, Jennifer ^c   Thomas, Shawn G ^c   Samudra, Ganesh ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c ASM AMERICA   (United States)

Author keywords

In situ phosphorous doped; Series resistance; Strain; Thermal budget

Indexed keywords

EPITAXIAL GROWTH; LATTICE MISMATCH; LEAKAGE CURRENTS; SEMICONDUCTOR DOPING;

IN SITU PHOSPHORUS-DOPED SILICON-CARBON; SHORT-CHANNEL EFFECTS; SILICON-CARBON STRESSOR; SOURCE/DRAIN EXTENSION;

FIELD EFFECT TRANSISTORS;

EID: 43549087380     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.920274     Document Type: Article

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