Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidation

IEEE Electron Device Letters

Volumn 29, Issue 7, 2008, Pages 756-758

  Wong, Hoong Shing ^a   Koh, Alvin Tian Yi ^a   Chin, Hock Chun ^a   Chan, Lap ^a   Samudra, Ganesh ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Antimony segregation; Parasitic series resistance; Salicidation; Schottky barrier (SB)

Indexed keywords

ANTIMONY; CONCENTRATION (PROCESS); DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; HEALTH; LEAKAGE CURRENTS; NICKEL; NICKEL ALLOYS; NICKEL COMPOUNDS; OPTICAL DESIGN; SCHOTTKY BARRIER DIODES; SEGREGATION (METALLOGRAPHY); SULFATE MINERALS;

DRIVE CURRENTS; H IGH CONCENTRATIONS; METALLIC NICKEL; N CHANNEL; N TYPE DOPANTS; N-CHANNEL TRANSISTORS; NICKEL SILICIDATION; OFF STATE LEAKAGE CURRENT; PARASITIC SERIES RESISTANCE; PERFORMANCE ENHANCEMENTS; SCHOTTKY BARRIER (SB); SEGREGATION (BENEFICIATION); SERIES RESISTANCE (ESR); SILICIDATION; SOURCE AND DRAIN (S/D); SOURCE-DRAIN; SUPPLY VOLTAGES;

TRANSISTORS;

EID: 47249117062     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.923712     Document Type: Article

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