Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths

IEEE Electron Device Letters

Volumn 29, Issue 4, 2008, Pages 382-385

  Lee, Rinus Tek Po ^a   Liow, Tsung Yang ^a   Tan, Kian Ming ^a   Lim, Andy Eu Jim ^a   Koh, Alvin Tian Yi ^a   Zhu, Ming ^a   Lo, Guo Qiang ^b   Samudra, Ganesh S ^a   Chi, Dong Zhi ^c   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

FinFETs; Nickel; NiSi; Parasitic resistance; Silicide

Indexed keywords

CONDUCTION BANDS; CONTACT RESISTANCE; EPITAXIAL GROWTH; SILICIDES;

CONDUCTION BAND-EDGE SCHOTTKY BARRIER; FINFETS; NICKEL ALUMINIDE DISILICIDE; PARASITIC RESISTANCE;

FIELD EFFECT TRANSISTORS;

EID: 41749089345     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.917813     Document Type: Article

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