Work function variation of nickel silicide using an ytterbium buffer layer for Schottky barrier metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 101, Issue 10, 2007, Pages

  Lee, Won Jae ^a   Kim, Do Woo ^a   Oh, Soon Young ^a   Kim, Yong Jin ^a   Zhang, Ying Ying ^a   Zhong, Zhun ^a   Li, Shi Guang ^a   Jung, Soon Yen ^a   Han, In Sik ^a   Gu, Tae Kyu ^a   Bae, Tae Sung ^b   Lee, Ga Won ^a   Wang, Jin Suk ^a   Lee, Hi Deok ^a  

^a Chungnam National University   (South Korea)

^b Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES; SCHOTTKY BARRIER DIODES; WORK FUNCTION; YTTERBIUM;

NICKEL SILICIDE; TERNARY PHASE;

NICKEL COMPOUNDS;

EID: 34249915535     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2734882     Document Type: Article

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