Leakage current study of Si 1-x C x embedded source/drain junctions

Applied Surface Science

Volumn 254, Issue 19, 2008, Pages 6140-6143

  Simoen, E ^a   Vissouvanadin, B ^a   Taleb, N ^a   Gonzalez, M Bargallo ^a,b   Verheyen, P ^a   Loo, R ^a   Claeys, C ^a,b   Machkaoutsan, V ^c   Bauer, M ^d   Thomas, S ^d   Lu, J P ^e   Wise, R ^e  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c ASM BELGIUM   (Belgium)

^d ASM AMERICA   (United States)

^e TEXAS INSTRUMENTS   (United States)

Author keywords

Embedded source drain regions; Junction leakage; Selective epitaxial growth; Strain engineering

Indexed keywords

BUDGET CONTROL; CAPACITANCE; DEPOSITION; ELECTRIC FIELDS; IN SITU PROCESSING; LEAKAGE (FLUID); LEAKAGE CURRENTS; SILICON COMPOUNDS;

CAPACITANCE VOLTAGE MEASUREMENTS; ELECTRICALLY ACTIVES; JUNCTION LEAKAGES; PROCESSING PARAMETERS; SELECTIVE EPITAXIAL GROWTH; SOURCE/DRAIN JUNCTIONS; SOURCE/DRAIN REGIONS; STRAIN ENGINEERING;

SULFUR COMPOUNDS;

EID: 45049083555     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.138     Document Type: Article

References (24)

1. Ang K.W., Chui K.J., Bliznetsov V., Du A., Balasubramanian N., Li M.F., Samudra G., and Yeo Y.-C. IEDM Tech. Dig. (2004) 1069
2. Ang K.-W., Chui K.-J., Chin H.-C., Foo Y.-L., Du A., Deng W., Li M.-F., Samudra G., Balasubramanian N., and Yeo Y.-C. Symposium on VLSI Technology Digest of Technical Papers. The IEEE (New York) (2006) 80
3. Chui K.-J., Ang K.-W., Chin H.-C., Shen C., Wong L.-Y., Tung C.-H., Balasubramanian N., Li M.F., Samudra G.S., and Yeo Y.-C. IEEE Electron Device Lett. 27 (2006) 778
4. Chui K.-J., Ang K.-W., Balasubramanian N., Li M.-F., Samudra G.S., and Yeo Y.-C. IEEE Trans. Electron Devices 54 (2007) 249
5. Ang K.W., Chui K.-J., Tung C.-H., Balasubramanian N., Li M.-F., Samudra G.S., and Yeo Y.-C. IEEE Electron Device Lett. 28 (2007) 301
6. Yeo Y.-C. Semicond. Sci. Technol. 22 (2007) S177
7. Zang H., Loh W.Y., Oh H.J., Choi K.J., Nguyen H.S., Lo G.Q., and Cho B.J. ECS Trans., vol. 6, issue 1 (2007), The Electrochemical Society, Pennington, New Jersey p. 105
8. Kim Y., Ye Z., Lam A., Zojaji A., Cho Y., and Kuppuraro S. ECS Trans., vol. 6, issue 1 (2007), The Electrochemical Society, Pennington, New Jersey p. 409
9. P. Verheyen, C. Kerner, F. Clemente, H. Bender, D. Shamiryan, R. Loo, T. Hoffmann, P. Absil, S. Biesemans, J.-P. Lu, R. Wise, V. Machkaoutsan, M. Bauer, D. Weeks, S.G. Thomas, Proc. of the 4th ISTDM, Hsinchu, Taiwan, R.O.C., May 11-14, 2008.
10. Liow T.-Y., Tan K.-M., Lee R.T.P., Du A., Tung C.-H., Samudra G.S., Yoo W.-J., Balasubramanian N., and Yeo Y.-C. Symposium on VLSI Technology Digest of Technical Papers. The IEEE (New York) (2006) 68
11. Bauer M., Machkaoutsan V., and Arena C. Semicond. Sci. Technol. 22 (2007) S183
12. Bauer M., Zhang Y., Weeks D., Machkaoutsan V., and Thomas S.G. ECS Trans., vol. 6, issue 1 (2007), The Electrochemical Society, Pennington, New Jersey p. 419
13. Bargallo Gonzalez M., Thomas N., Simoen E., Verheyen P., Hikavyy A., Leys F., Okuno Y., Vissouvanadin Soubaretty B., Van Daele B., Geenen L., Loo R., Claeys C., Machkaoutsan V., Tomasini P., Thomas S.G., Lu J.P., Weijtmans J., and Wise R. ECS Trans., vol. 11, issue 3 (2007), The Electrochemical Society, Pennington, New Jersey p. 47
14. Smeys P., Griffin P.B., Rek Z.U., De Wolf I., and Saraswat K.C. IEEE Trans. Electron Devices 46 (1999) 1245
15. Simoen E., Claeys C., and Vanhellemont J. Defect Diffusion Forum 261-262 (2007) 1
16. Cowern N.E.B., Zalm P.C., van der Sluis P., Gravesteijn G.J., and de Boer W.B. Phys. Rev. Lett. 72 (1994) 2585
17. Hurkx G.A.M., Klaassen D.B.M., and Knuvers M.P.G. IEEE Trans. Electron Devices 39 (1992) 331
18. Ang K.-W., Chui K.-J., Bliznetsov V., Tung C.-H., Du A., Balasubramanian N., Samudra G., Lu M.F., and Yeo Y.-C. Appl. Phys. Lett. 86 (2005) 093102
19. Lin C.-Y., Chang S.-T., Huang J., Wang W.-C., and Fan J.-F. Jpn. J. Appl. Phys. 46 (2007) 2107
20. Stesmans A., Pierreux D., Jaccodine R.J., Lin M.-T., and Delph T.J. Appl. Phys. Lett. 82 (2003) 3038
21. Cheng C.Y., Fang Y.K., Hsieh J.C., Hsia H., Sheu Y.M., Lu W.T., Chen W.M., and Lin S.S. IEEE Electron Device Lett. 28 (2007) 408
22. Wong K.M., Chim W.K., Ang K.W., and Yeo Y.-C. Appl. Phys. Lett. 90 (2007) 153507-1
23. Sheu Y.-M., Yang S.-J., Wang C.-C., Chang C.-S., Huang L.-P., Huang T.-Y., Chen M.-J., and Diaz C.H. IEEE Trans. Electron Devices 52 (2005) 30
24. Chen M.-J., and Sheu Y.-M. Appl. Phys. Lett. 89 (2006) 161908-1