Impact of Ni-silicide grain orientation on the strain and stress fields induced in patterned silicon

Applied Physics Letters

Volumn 90, Issue 5, 2007, Pages

  Torregiani, C ^b   Maex, K ^a   Benedetti, A ^b   Bender, H ^b   Van Houtte, P ^c   Pawlak, B J ^d   Kittl, J A ^e  

^a Katholieke Universiteit Leuven   (Belgium)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d NXP SEMICONDUCTORS   (Netherlands)

^e TEXAS INSTRUMENTS   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ORIENTATION; FINITE ELEMENT METHOD; NICKEL COMPOUNDS; TRANSISTORS;

FINITE ELEMENT SIMULATIONS; NI-SILICIDE GRAIN ORIENTATION;

SILICON COMPOUNDS;

EID: 33846943646     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2437064     Document Type: Article

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