Route to low parasitic resistance in MuGFETs with silicon-carbon source/drain: Integration of novel low barrier Ni(M)Si:C metal silicides and pulsed laser annealing

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 685-688

  Lee, Rinus Tek Po ^a   Koh, Alvin Tian Yi ^a   Liu, Fang Yue ^a   Fang, Wei Wei ^a   Liow, Tsung Yang ^a   Tan, Kian Ming ^a   Lim, Poh Chong ^b   Lim, Andy Eu Jin ^a   Zhu, Ming ^a   Hoe, Keat Mun ^c   Tung, Chih Hang ^c   Lo, Guo Qiang ^c   Wang, Xincai ^d   Low, David Kuang Yong ^d   Samudra, Ganesh S ^a   Chi, Dong Zhi ^b   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE INTEGRATION; ELECTRON BARRIER; LOW-PARASITIC; METAL SILICIDES; PARASITIC RESISTANCES; PULSED LASER ANNEALING; SERIES RESISTANCE;

ANNEALING; DYSPROSIUM; ELECTRON DEVICES; FIELD EFFECT TRANSISTORS; METALS; NICKEL; NICKEL ALLOYS; NONMETALS; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SILICON COMPOUNDS;

SILICON;

EID: 47249140268     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419038     Document Type: Conference Paper

References (6)

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4. Y. Liu et al., Symp. VLSI Tech. p. 44, 2007.
5. R.T. P. Lee et al., IEDM Tech. Dig. p. 851, 2006.
6. X. P. Qu et al., Thin Solid Films, p. 146, 2004.