Fully depleted silicon-on-insulator nMOSFETs with tensile strained high carbon content Si1-yCy channels

ECS Transactions

Volumn 3, Issue 2, 2006, Pages 333-342

  Ducroquet, F ^a,b   Hartmann, J M ^a   Tabone, C ^a   Lafond, D ^a   Vizioz, C ^a   Ernst, T ^a   Deleonibus, S ^a  

^a CEA LETI   (France)

^b IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; OXIDATION; SILICON ON INSULATOR TECHNOLOGY; TENSILE STRESS; THRESHOLD VOLTAGE; TITANIUM NITRIDE;

CONDUCTION BAND OFFSET; INTERFACE STATE DENSITY; LOW OXIDATION TEMPERATURE; OXIDE QUALITY;

MOSFET DEVICES;

EID: 33846959870     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2356293     Document Type: Conference Paper

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