High C content Si/Si1-yCy heterostructures for n-type metal oxide semiconductor transistors

Semiconductor Science and Technology

Volumn 19, Issue 5, 2004, Pages 593-601

  Hartmann, J M ^a   Ernst, T ^a   Ducroquet, F ^a,b   Rolland, G ^a   Lafond, D ^a   Papon, A M ^a   Truche, R ^a   Holliger, P ^a   Laugier, F ^a   Semeria M N ^a   Deleonibus, S ^a  

^a CEA GRENOBLE   (France)

^b UNIVERSITÉ DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON; CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; MOS DEVICES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SILANES; TENSILE STRESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

BORON DEPTH PROFILING; GAS PRESURSORS; MOBILITY REDUCTION; REDUCED PRESSURE-CHEMICAL VAPOR DEPOSITION (RP-CVD);

TRANSISTORS;

EID: 2542482754     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/5/007     Document Type: Article

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