N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy

IEEE Electron Device Letters

Volumn 29, Issue 12, 2008, Pages 1315-1318

  Koh, Shao Ming ^a   Sekar, Karuppanan ^b   Lee, David ^b   Krull, Wade ^b   Wang, Xincai ^c   Samudra, Ganesh S ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b Ceradyne Inc   (United States)

^c SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

Author keywords

Laser anneal; Molecular carbon; Silicon carbon; Solid phase epitaxy (SPE); Strain

Indexed keywords

CARBON CLUSTERS; CRYSTAL GROWTH; LASERS; MESFET DEVICES; MOSFET DEVICES; PULSED LASER APPLICATIONS; SILICON;

CARBON CONCENTRATIONS; CURRENT DRIVES; EPITAXY TECHNIQUES; EXCIMER; LASER ANNEAL; MOLECULAR CARBON; MOS FETS; NOVEL CLUSTERS; PREAMORPHIZATION; SERIES RESISTANCES; SOLID PHASE EPITAXIES; SOLID PHASE EPITAXY (SPE); SOURCE/DRAIN STRESSORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 57049154524     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2005648     Document Type: Article

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