High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Yang, B ^b,c   Takalkar, R ^a   Ren, Z ^a   Black, L ^b   Dube, A ^a   Weijtmans, J W ^b   Li, J ^a   Johnson, J B ^a   Faltermeier, J ^c   Madan, A ^a   Zhu, Z ^a   Turansky, A ^a   Xia, G ^a   Chakravarti, A ^a   Pal, R ^b   Chan, K ^e   Reznicek, A ^c   Adam, T N ^c   De Souza, J P ^c   Harley, E C T ^a   Greene, B ^a   Gehring, A ^b   Cai, M ^a   Aime, D ^d   Sun, S ^a   Meer, H ^b   Holt, J ^a   Theodore, D ^d   Zollner, S ^d   Grudowski, P ^d   Sadana, D ^c   Park, D G ^c   Mocuta, D ^a   Schepis, D ^a   Maciejewski, E ^a   Luning, S ^b   Pellerin, J ^b   Leobandung, ^a   more..

^a ADVANCED MICRO DEVICES   (United States)

^b IBM MICROELECTRONICS   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d FREESCALE SEMICONDUCTOR INC   (United States)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MOBILITIES; DRIVE CURRENTS; IN-SITU; N-MOSFET; PHOSPHORUS-DOPED; POLY GATES; SOURCE DRAINS;

ELECTRON DEVICES; PHOSPHORUS;

SURFACE MOUNT TECHNOLOGY;

EID: 64549099012     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796611     Document Type: Conference Paper

References (5)

1. Z. Ren, et al., VLSI Tech. Dig., P.172-173, 2008.
2. B. (F.)Yang, et al., ECS SiGe, Ge &Related Materials, Processing & Devices Symposium, Hawaii, Oct. 2008, (to be published).
3. Y. Liu, et al., VLSI Tech. Dig., p.44-45, 2007.
4. K.W. Ang, IEDM Tech. Dig., p. 503-506, 2005.
5. P. Grudowski, et al., SOI Conf. Proc., p.17, 2007.