메뉴 건너뛰기




Volumn 22, Issue 1, 2007, Pages

Enhancing CMOS transistor performance using lattice-mismatched materials in source/drain regions

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON MOBILITY; LATTICE CONSTANTS; LATTICE MISMATCH; STRAIN RATE;

EID: 34247235178     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/1/S42     Document Type: Article
Times cited : (104)

References (22)
  • 1
    • 4544324636 scopus 로고    scopus 로고
    • Device challenges and opportunities
    • Hu C 2004 Device challenges and opportunities Symp. VLSI Technology pp 4-5
    • (2004) Symp. VLSI Technology , pp. 4-5
    • Hu, C.1
  • 2
    • 0034452586 scopus 로고    scopus 로고
    • Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design
    • Ito S et al 2000 Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design Int. Electron Device Meeting Tech. Dig. pp 247-50
    • (2000) Int. Electron Device Meeting Tech. Dig. , pp. 247-250
    • Ito, S.1    Al, E.2
  • 3
    • 0842288292 scopus 로고    scopus 로고
    • Process-strained Si CMOS technology featuring 3D strain engineering
    • Ge C H et al 2003 Process-strained Si CMOS technology featuring 3D strain engineering IEDM Tech. Dig. pp 73-6
    • (2003) IEDM Tech. Dig. , pp. 73-76
    • Ge, C.H.1    Al, E.2
  • 4
    • 3242671509 scopus 로고    scopus 로고
    • A 90 nm high volume manufacturing logic technology featuring novel 45 nm gate length strained silicon CMOS transistors
    • Ghani T et al 2003 A 90 nm high volume manufacturing logic technology featuring novel 45 nm gate length strained silicon CMOS transistors IEDM Tech. Dig. pp 978-80
    • (2003) IEDM Tech. Dig. , pp. 978-980
    • Ghani, T.1    Al, E.2
  • 5
    • 12744250298 scopus 로고    scopus 로고
    • Strained channel transistor using strain field induced by source and drain stressors
    • Yeo Y C, Sun J and Ong E H 2004 Strained channel transistor using strain field induced by source and drain stressors Material Research Soc. Symp. 809 219
    • (2004) Material Research Soc. Symp. , vol.809 , pp. 219
    • Yeo, Y.C.1    Sun, J.2    Ong, E.H.3
  • 6
    • 19744383008 scopus 로고    scopus 로고
    • Finite-element study of strain distribution in transistor with silicon-germanium source and drain Regions
    • Yeo Y C and Sun J 2005 Finite-element study of strain distribution in transistor with silicon-germanium source and drain Regions Appl. Phys. Lett. 83 023103
    • (2005) Appl. Phys. Lett. , vol.83
    • Yeo, Y.C.1    Sun, J.2
  • 7
    • 4544284412 scopus 로고    scopus 로고
    • 35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS
    • Chidambaram P R et al 2004 35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS Symp. VLSI Technology pp 48-9
    • (2004) Symp. VLSI Technology , pp. 48-49
    • Chidambaram, P.R.1    Al, E.2
  • 8
    • 33646079140 scopus 로고    scopus 로고
    • Layout impact on the performance of a locally strained PMOSFET
    • Eneman G et al 2005 Layout impact on the performance of a locally strained PMOSFET Symp. VLSI Technology pp 22-3
    • (2005) Symp. VLSI Technology , pp. 22-23
    • Eneman, G.1    Al, E.2
  • 9
    • 27744475710 scopus 로고    scopus 로고
    • Embedded SiGe S/D PMOS on thin body SOI substrate with drive current enhancement
    • Zhang D et al 2005 Embedded SiGe S/D PMOS on thin body SOI substrate with drive current enhancement Symp. VLSI Technology pp 26-7
    • (2005) Symp. VLSI Technology , pp. 26-27
    • Zhang, D.1    Al, E.2
  • 10
    • 27744459165 scopus 로고    scopus 로고
    • Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates
    • Ouyang Q et al 2005 Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates Symp. VLSI Technology pp 28-9
    • (2005) Symp. VLSI Technology , pp. 28-29
    • Ouyang, Q.1    Al, E.2
  • 11
    • 33847287986 scopus 로고    scopus 로고
    • Integration and optimization of embedded-SiGe compressive and tensile stressed liner films, and stress memorization in advanced SOI CMOS technologies
    • Horstmann M et al 2005 Integration and optimization of embedded-SiGe compressive and tensile stressed liner films, and stress memorization in advanced SOI CMOS technologies IEDM Tech. Dig. pp 243-6
    • (2005) IEDM Tech. Dig. , pp. 243-246
    • Horstmann, M.1    Al, E.2
  • 12
    • 33845873394 scopus 로고    scopus 로고
    • Source/drain Ge condensation for p-channel strained ultra-thin body transistors
    • Chui K J et al 2005 source/drain Ge condensation for p-channel strained ultra-thin body transistors IEDM Tech. Dig. pp 499-502
    • (2005) IEDM Tech. Dig. , pp. 499-502
    • Chui, K.J.1    Al, E.2
  • 14
    • 4544382132 scopus 로고    scopus 로고
    • Stress memorization technique (SMT) by selectively strained nitride capping for sub-65 nm high-performance strained-Si device application
    • Chen C H et al 2004 Stress memorization technique (SMT) by selectively strained nitride capping for sub-65 nm high-performance strained-Si device application Symp. VLSI Technol. pp 56-57
    • (2004) Symp. VLSI Technol. , pp. 56-57
    • Chen, C.H.1    Al, E.2
  • 17
    • 0000854611 scopus 로고    scopus 로고
    • Short-range order bulk moduli, and physical trends in c-SiC alloys
    • Kelires P C 1997 Short-range order bulk moduli, and physical trends in c-SiC alloys Phys. Rev. B 55 8784-87
    • (1997) Phys. Rev. , vol.55 , Issue.14 , pp. 8784-8787
    • Kelires, P.C.1
  • 21
    • 0019916789 scopus 로고
    • A graphical representation of the piezoresistance coefficients in Si
    • Kanda Y 1982 A graphical representation of the piezoresistance coefficients in Si IEEE Trans. Electron Devices 29 64
    • (1982) IEEE Trans. Electron Devices , vol.29 , pp. 64
    • Kanda, Y.1
  • 22
    • 0034452629 scopus 로고    scopus 로고
    • Low temperature recessed junction selective SiGe source-drain technology for sub-70 nm CMOS
    • Gannavaram S, Pesovic N and ztürk M C 2000 Low temperature recessed junction selective SiGe source-drain technology for sub-70 nm CMOS IEDM Tech. Dig. pp 437-40
    • (2000) IEDM Tech. Dig. , pp. 437-440
    • Gannavaram, S.1    Pesovic, N.2    Ztürk, M.C.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.